An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance
نویسندگان
چکیده
This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications. Wherein two gates, and field plate are introduced vertically on the sidewalls connected, respectively, to source. Technology computer-aided design (TCAD) simulator was used in process achieve specific on-resistance as low 0.79 mΩ.cm 2 device, which has capacity of blocking voltages up 600 V. The peak electric PSGT-MOSFET could well be lowered 2.95 MV/cm, is about 17% lower than that conventional (TG-MOSFET) near corner with help optimization depth, drift doping, thickness. TCAD simulation shows higher doping performance produces ~2× switching losses when compared similarly rated TG-MOSFET device.
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ژورنال
عنوان ژورنال: IEEE Access
سال: 2023
ISSN: ['2169-3536']
DOI: https://doi.org/10.1109/access.2023.3265477